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| Product Specification www.jmnic.com 2SD1297 Silicon NPN Transistors BCE Features Darlington With TO-3PFa package Low speed power switching applications Absolute Maximum Ratings Tc=25ae SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current-Continuous Total Power Dissipation@TC=25ae Junction temperature Storage temperature RATING 150 100 5 25 100 150 -55~150 ae ae UNIT V V V A W TO-3PFa Electrical Characteristics Tc=25ae SYMBOL VCEO(SUS) VCBO ICEO ICBO IEBO VEBO VCE(sat-1) VCE(sat-2) hFE-1 hFE-2 VBE(sat)1 VBE(sat)2 fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Emitter-Base Voltage Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Base-emitter saturation voltages Base-emitter saturation voltages Transition frequency IC=15A; IB=0.03A 2.2 V IC=15A; VCE=2V 1000 30000 IC=15A; IB=0.03A 1.5 V VCB=100V; IE=0 VEB=5V; IC=0 10 5 uA mA CONDITIONS IC=100mA; IB=0 MIN 100 MAX UNIT V JMnic |
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